首页 >IS64WV6416BLL>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IS64WV6416BLL | 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 μW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper 文件：375.96 Kbytes 页数：17 Pages | ISSI 矽成半导体 | ISSI | |
IS64WV6416BLL | 64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：101.46 Kbytes 页数：16 Pages | ISSI 矽成半导体 | ISSI | |
64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 μW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper 文件：375.96 Kbytes 页数：17 Pages | ISSI 矽成半导体 | ISSI | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 μW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper 文件：375.96 Kbytes 页数：17 Pages | ISSI 矽成半导体 | ISSI | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 μW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper 文件：375.96 Kbytes 页数：17 Pages | ISSI 矽成半导体 | ISSI | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 μW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper 文件：375.96 Kbytes 页数：17 Pages | ISSI 矽成半导体 | ISSI | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 μW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper 文件：375.96 Kbytes 页数：17 Pages | ISSI 矽成半导体 | ISSI | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：101.46 Kbytes 页数：16 Pages | ISSI 矽成半导体 | ISSI | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：101.46 Kbytes 页数：16 Pages | ISSI 矽成半导体 | ISSI | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：101.46 Kbytes 页数：16 Pages | ISSI 矽成半导体 | ISSI |
详细参数
- 型号：
IS64WV6416BLL
- 制造商：
ISSI
- 制造商全称：
Integrated Silicon Solution, Inc
- 功能描述：
64K x 16 HIGH-SPEED CMOS STATIC RAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
25+ |
BGA |
4500 |
ISSI存储芯片在售 |
询价 | ||
ISSI |
23+ |
48-迷你型BGA(8x10) |
36430 |
专业分销产品!原装正品!价格优势! |
询价 | ||
ISSI |
24+ |
SMD |
15600 |
静态随机存取存储器1Mb15ns64Kx16Async静态随机存取存 |
询价 | ||
ISSI |
23+ |
BGA |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ISS |
2018+ |
TSOP-44 |
26976 |
代理原装现货/特价热卖! |
询价 | ||
ISSI |
20+ |
TSSOP44 |
2960 |
诚信交易大量库存现货 |
询价 | ||
ISSI, Integrated Silicon Solut |
21+ |
144-TFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
ISSI |
24+ |
65200 |
询价 | ||||
ISSI |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
ISSI(美国芯成) |
2447 |
miniBGA-48(8x10) |
315000 |
480个/托盘一级代理专营品牌!原装正品,优势现货,长 |
询价 |
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