DESCRIPTION

The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access time: 45ns, 55ns

• CMOS low power operation:

30 mW (typical) operating

15 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

1.7V--2.2V VDD (62WV6416ALL)

2.5V--3.6V VDD (62WV6416BLL)

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• 2CS Option Available

• Lead-free available

IS62WV6416BLL-55TI属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS62WV6416BLL-55TI存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。