IS62WV6416BLL集成电路（IC）的存储器规格书PDF中文资料

DESCRIPTION

The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access time: 45ns, 55ns

• CMOS low power operation:

30 mW (typical) operating

15 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

1.7V--2.2V VDD (62WV6416ALL)

2.5V--3.6V VDD (62WV6416BLL)

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• 2CS Option Available

• Lead-free available