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IS62WV102416BLL

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat

文件:444.61 Kbytes 页数:17 Pages

ISSI

矽成半导体

IS62WV102416BLL

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

文件:187.7 Kbytes 页数:17 Pages

ISSI

矽成半导体

IS62WV102416BLL-25MI

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat

文件:444.61 Kbytes 页数:17 Pages

ISSI

矽成半导体

IS62WV102416BLL-25MLI

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat

文件:444.61 Kbytes 页数:17 Pages

ISSI

矽成半导体

IS62WV102416BLL-25TI

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat

文件:444.61 Kbytes 页数:17 Pages

ISSI

矽成半导体

IS62WV102416BLL-25TLI

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compat

文件:444.61 Kbytes 页数:17 Pages

ISSI

矽成半导体

IS62WV102416BLL-25MI

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

文件:187.7 Kbytes 页数:17 Pages

ISSI

矽成半导体

IS62WV102416BLL-25MLI

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

文件:187.7 Kbytes 页数:17 Pages

ISSI

矽成半导体

IS62WV102416BLL-25TI

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

文件:187.7 Kbytes 页数:17 Pages

ISSI

矽成半导体

IS62WV102416BLL-25TLI

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

文件:187.7 Kbytes 页数:17 Pages

ISSI

矽成半导体

详细参数

  • 型号:

    IS62WV102416BLL

  • 功能描述:

    静态随机存取存储器 16M(1Mx16) 25ns Async 静态随机存取存储器

  • RoHS:

  • 制造商:

    Cypress Semiconductor

  • 存储容量:

    16 Mbit

  • 组织:

    1 M x 16

  • 访问时间:

    55 ns

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.2 V

  • 最大工作电流:

    22 uA

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 40 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    TSOP-48

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
ISSI
25+
TSOP
6500
十七年专营原装现货一手货源,样品免费送
询价
ISSI
23+
TSOP
3000
原装正品假一罚百!可开增票!
询价
ISSI
25+
BGA
4500
ISSI存储芯片在售
询价
ISSI
23+
48-TSOPI
9550
专业分销产品!原装正品!价格优势!
询价
ISSI
25+
TSOP
210
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ISSI
1701+
?
8450
只做原装进口,假一罚十
询价
ISSI
24+
BGA(48)
12000
专营ISSI进口原装正品假一赔十可開17增值稅票
询价
INTEGRATEDS
23+
原厂封装
9888
专做原装正品,假一罚百!
询价
ISSI
25+23+
BGA48
8055
绝对原装正品全新进口深圳现货
询价
ISSI
18+
TSOP48
85600
保证进口原装可开17%增值税发票
询价
更多IS62WV102416BLL供应商 更新时间2026-2-1 9:38:00