512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

矽成半导体

512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

矽成半导体

512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

矽成半导体

SOJ36

ISSI

矽成半导体

上传：深圳市旺财半导体有限公司

TFBGA-36(6x8)

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司