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IS61QDB22M18C-300M3I

2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM

FEATURES • 1Mx36 and 2Mx18 configuration available. • On-chip Delay-Locked Loop (DLL) for wide data valid window. • Separate independent read and write ports with concurrent read and write operations. • Synchronous pipeline read with EARLY write operation. • Double Data Rate (DDR) interface f

文件:851.57 Kbytes 页数:29 Pages

ISSI

矽成半导体

IS61QDB22M18C-300M3L

2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM

FEATURES • 1Mx36 and 2Mx18 configuration available. • On-chip Delay-Locked Loop (DLL) for wide data valid window. • Separate independent read and write ports with concurrent read and write operations. • Synchronous pipeline read with EARLY write operation. • Double Data Rate (DDR) interface f

文件:851.57 Kbytes 页数:29 Pages

ISSI

矽成半导体

IS61QDB22M18C-300M3LI

2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM

FEATURES • 1Mx36 and 2Mx18 configuration available. • On-chip Delay-Locked Loop (DLL) for wide data valid window. • Separate independent read and write ports with concurrent read and write operations. • Synchronous pipeline read with EARLY write operation. • Double Data Rate (DDR) interface f

文件:851.57 Kbytes 页数:29 Pages

ISSI

矽成半导体

IS61QDB22M18C-300M3

2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM

FEATURES • 1Mx36 and 2Mx18 configuration available. • On-chip Delay-Locked Loop (DLL) for wide data valid window. • Separate independent read and write ports with concurrent read and write operations. • Synchronous pipeline read with EARLY write operation. • Double Data Rate (DDR) interface f

文件:851.57 Kbytes 页数:29 Pages

ISSI

矽成半导体

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26+
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102
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22+
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更多IS61QDB22M18C-300M3I供应商 更新时间2026-10-1 11:10:00