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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61QDB22M18C-250M3LI	文件：851.57 Kbytes Page：29 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface f 文件：851.57 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M18C-300B4	文件：851.57 Kbytes Page：29 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface f 文件：851.57 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M18C-300B4I	文件：851.57 Kbytes Page：29 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface f 文件：851.57 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M18C-300B4L	文件：851.57 Kbytes Page：29 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface f 文件：851.57 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M18C-300B4LI	文件：851.57 Kbytes Page：29 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface f 文件：851.57 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M18C-300M3	文件：851.57 Kbytes Page：29 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface f 文件：851.57 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M18C-300M3I	文件：851.57 Kbytes Page：29 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface f 文件：851.57 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M18C-300M3L	文件：851.57 Kbytes Page：29 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface f 文件：851.57 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M18C-300M3LI	文件：851.57 Kbytes Page：29 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface f 文件：851.57 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI
IS61QDB22M18C-333B4	文件：851.57 Kbytes Page：29 Pages	2Mx18, 1Mx36 36Mb QUAD (Burst 2) Synchronous SRAM FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface f 文件：851.57 Kbytes 页数：29 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS61QDB22M18
功能描述：
静态随机存取存储器 36Mb 2Mbx18 QUAD Sync 静态随机存取存储器
RoHS：
否
制造商：
Cypress Semiconductor
存储容量：
16 Mbit
组织：
1 M x 16
访问时间：
55 ns
电源电压-最大：
3.6 V
电源电压-最小：
2.2 V
最大工作电流：
22 uA
最大工作温度：
+ 85 C
最小工作温度：
- 40 C
安装风格：
SMD/SMT
封装/箱体：
TSOP-48
封装：
Tray

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市正迈科技有限公司	IS61QDB22M18-250M3L	ISSI	23+	原厂原封□□□	20000	原厂授权代理分销现货只做原装正迈科技样品支持现货	询价
深圳市毅创腾电子科技有限公司	IS61QDB22M18-250M3	ISSI	23+	165-FBGA(15x17)	9550	专业分销产品!原装正品!价格优势!	询价
深圳市豪迈兴电子有限公司	IS61QDB22M18-250M3	ISSI	24+	BGA	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市佳鑫美电子科技有限公司	IS61QDB22M18250M3	ISSI	25+	BGA	4500	原装正品!公司现货!欢迎来电!	询价
深圳市华来深电子有限公司	IS61QDB22M18-250M3I	ISSI	23+	BGA	8650	受权代理!全新原装现货特价热卖!	询价
深圳市斌腾达科技有限公司	IS61QDB22M18C-250M3LI	ISSI, Integrated Silicon Solut	21+	BGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS61QDB22M18-250M3L	ISSI	24+		65200		询价
深圳市艾宇欣科技有限公司	IS61QDB22M18A-250M3L	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	IS61QDB22M18-250M3	ISSI	2447	BGA	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	IS61QDB22M18C-250M3LI	ISSI	25+	BGA-165	1001	就找我吧!--邀您体验愉快问购元件!	询价

更多IS61QDB22M18供应商更新时间2026-2-4 9:12:00

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