512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin

文件：1.97506 Mbytes 页数：39 Pages

ISSI

矽成半导体

512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin

文件：1.97506 Mbytes 页数：39 Pages

ISSI

矽成半导体

512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin

文件：1.97506 Mbytes 页数：39 Pages

ISSI

矽成半导体

512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin

文件：1.97506 Mbytes 页数：39 Pages

ISSI

矽成半导体

512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin

文件：1.97506 Mbytes 页数：39 Pages

ISSI

矽成半导体

512 K x36 and 1024 K x18 18 Mb PIPELINE NO WAIT STATE BUS SYNCHRONOUS SRAM

FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin

文件：1.97506 Mbytes 页数：39 Pages

ISSI

矽成半导体

1Mb x 36 and 2Mb x 18 STATE BUS SRAM

DESCRIPTION The 36 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 1M words by 36 bits and 2M words by 18 bits, fabricate

文件：228.58 Kbytes 页数：22 Pages

ISSI

矽成半导体

1Mb x 36 and 2Mb x 18 STATE BUS SRAM

DESCRIPTION The 36 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 1M words by 36 bits and 2M words by 18 bits, fabricate

文件：228.58 Kbytes 页数：22 Pages

ISSI

矽成半导体

1Mb x 36 and 2Mb x 18 STATE BUS SRAM

DESCRIPTION The 36 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 1M words by 36 bits and 2M words by 18 bits, fabricate

文件：228.58 Kbytes 页数：22 Pages

ISSI

矽成半导体

1Mb x 36 and 2Mb x 18 STATE BUS SRAM

DESCRIPTION The 36 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 1M words by 36 bits and 2M words by 18 bits, fabricate

文件：228.58 Kbytes 页数：22 Pages

ISSI

矽成半导体