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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61LV3216-15T	文件：58.48 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption 文件：58.48 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV3216-15TI	文件：58.48 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption 文件：58.48 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV3216-20K	文件：58.48 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption 文件：58.48 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV3216-20KI	文件：58.48 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption 文件：58.48 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV3216-20T	文件：58.48 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption 文件：58.48 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV3216-20TI	文件：58.48 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption 文件：58.48 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV3216L	文件：102.74 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio 文件：102.74 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV3216L-10K	文件：102.74 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio 文件：102.74 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV3216L-10T	文件：102.74 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio 文件：102.74 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS61LV3216L-12K	文件：102.74 Kbytes Page：8 Pages	32K x 16 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio 文件：102.74 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS61LV3216
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
32K x 16 LOW VOLTAGE CMOS STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市壹芯创科技有限公司	IS61LV3216	ISSI	22+	TQFP	5000	全新原装现货!自家库存!	询价
深圳市赛尔通科技有限公司	IS61LV3216	ALTERA	23+		65480		询价
深圳市莱克讯科技有限公司	IS61LV3216	ISSI	1923+	TQFP	8200	莱克讯原厂货源每一片都来自原厂原装现货薄利多	询价
贸泽芯城（深圳）电子科技有限公司	IS61LV3216	ISSI	23+	IS	98588	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
上海凌岳电子科技有限公司（上海涵恩科技）	IS61LV3216		2023+		5000	进口原装现货	询价
芯有半导体（深圳）有限公司	IS61LV3216-10T	ISSI	05+	原厂原装	4343	只做全新原装真实现货供应	询价
深圳市毅创腾电子科技有限公司	IS61LV3216L-12T	ISSI		TSOP	1000	正品原装--自家现货-实单可谈	询价
深圳市福田区绿盛电子商行	IS61LV3216-10T	ISSI	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市弘为电子有限公司	IS61LV3216L-10T	ISSI	24+	TSOP	2000	原装现货假一罚十	询价
深圳市卓越微芯电子有限公司	IS61LV3216-12T		25+		34	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多IS61LV3216供应商更新时间2026-1-30 16:10:00

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