32K x 16 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio

文件：102.74 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 16 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio

文件：102.74 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 16 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio

文件：102.74 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 16 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio

文件：102.74 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 16 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio

文件：102.74 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 16 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio

文件：102.74 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 16 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio

文件：102.74 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 16 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio

文件：102.74 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 16 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio

文件：102.74 Kbytes 页数：8 Pages

ISSI

矽成半导体

32K x 16 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV3216L is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumptio

文件：102.74 Kbytes 页数：8 Pages

ISSI

矽成半导体