Mobile DDR SDRAM

·Double-data rate\n·Four internal banks with bank controls\n·Programmable Burst Length and CAS Latency\n·Power Savings with:- Partial Array Self Refresh (PASR)- Temperature Compenstate Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support\n • JEDEC standard 1.8V power supply.\n• Four internal banks for concurrent operation\n• CAS latency 2, 3(clock)\n• Burst type(sequential & interleave)\n• Burst length(2, 4, 8)\n• Fully differential clock inputs(CK, /CK)\n• Data I/O transaction on both edges of data strobe\n• DM for write masking only;

ISSI

矽成半导体

Four internal banks for concurrent operation

文件：1.85788 Mbytes 页数：43 Pages

ISSI

矽成半导体

1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK

文件：1.95251 Mbytes 页数：47 Pages

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矽成半导体

BGA

ISSI

矽成半导体

上传：深圳市宇创芯科技有限公司

FBGA96

ISSI

矽成半导体

上传：深圳市富芯乐电子科技有限公司