Mobile DDR SDRAM

·Double-data rate\n·Four internal banks with bank controls\n·Programmable Burst Length and CAS Latency\n·Power Savings with:- Partial Array Self Refresh (PASR)- Temperature Compenstate Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support

ISSI

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16M x 32Bits x 4Banks Mobile DDR SDRAM

文件：1.86999 Mbytes 页数：43 Pages

ISSI

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BGA

ISSI

矽成半导体

上传：深圳市宇创芯科技有限公司

FBGA96

ISSI

矽成半导体

上传：深圳市富芯乐电子科技有限公司

FBGA96

ISSI

矽成半导体

上传：深圳市得捷芯城科技有限公司