4M x 16Bits x 4Banks Mobile Synchronous DRAM

Description These IS42/45VM16160G are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the ris

文件：937.43 Kbytes 页数：27 Pages

ISSI

矽成半导体

Mobile/Low Voltage SDR SDRAM

·Synchronous SDRAM interface\n·Multiple Supply Voltage options: 1.8V, 2.5V, 3.3V\n·Full features of standard SDRAM plus mobile:- Partial Array Self Refresh (PASR)- Temperature Compensated Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support

ISSI

矽成半导体

BGA

ISSI

矽成半导体

上传：深圳德田科技有限公司

BGA

ISSI

矽成半导体

上传：深圳市宇创芯科技有限公司

FBGA96

ISSI

矽成半导体

上传：深圳市富芯乐电子科技有限公司