IS45S32400E资料datasheet下载原装现货ISSI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS45S32400E	文件：895.21 Kbytes Page：60 Pages	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync 文件：895.21 Kbytes 页数：60 Pages	ISSI 矽成半导体	ISSI
IS45S32400E-6BLA1	文件：895.21 Kbytes Page：60 Pages	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync 文件：895.21 Kbytes 页数：60 Pages	ISSI 矽成半导体	ISSI
IS45S32400E-6BLA2	文件：895.21 Kbytes Page：60 Pages	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync 文件：895.21 Kbytes 页数：60 Pages	ISSI 矽成半导体	ISSI
IS45S32400E-6TLA1	文件：895.21 Kbytes Page：60 Pages	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync 文件：895.21 Kbytes 页数：60 Pages	ISSI 矽成半导体	ISSI
IS45S32400E-7BA1	文件：895.21 Kbytes Page：60 Pages	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync 文件：895.21 Kbytes 页数：60 Pages	ISSI 矽成半导体	ISSI
IS45S32400E-7BLA1	文件：895.21 Kbytes Page：60 Pages	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync 文件：895.21 Kbytes 页数：60 Pages	ISSI 矽成半导体	ISSI
IS45S32400E-7BLA2	文件：895.21 Kbytes Page：60 Pages	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync 文件：895.21 Kbytes 页数：60 Pages	ISSI 矽成半导体	ISSI
IS45S32400E-7TLA1	文件：895.21 Kbytes Page：60 Pages	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync 文件：895.21 Kbytes 页数：60 Pages	ISSI 矽成半导体	ISSI
IS45S32400E-7TLA2	文件：895.21 Kbytes Page：60 Pages	4M x 32 128Mb SYNCHRONOUS DRAM OVERVIEW ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully sync 文件：895.21 Kbytes 页数：60 Pages	ISSI 矽成半导体	ISSI
IS45S32400E	文件：300 bytes Page：1 Pages	SDR SDRAM ·Synchronous, with 3.3V power supply\n·LVTTL interface\n·Programmable burst length (1, 2, 4, 8, full page)\n·Programmable burst sequence: Sequential/Interleave\n·Self refresh and Auto Refresh modes\n·Random column address every clock cycle\n·Programmable CAS latency (2, 3 clocks)\n·Burst read/write	ISSI 矽成半导体	ISSI

详细参数

型号：
IS45S32400E
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
4M x 32 128Mb SYNCHRONOUS DRAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	IS45S32400E-6TLA1	ISSI	10+	TSSOP86	1570	全新原装进口自己库存优势	询价
深圳市鹏和科技有限公司	IS45S32400E-7TLA2	ISSI	24+	TSOP	5000	只做原装公司现货	询价
深圳市海天鸿电子科技有限公司	IS45S32400E-7TLA1	ISSI	1650+	?	8450	只做原装进口,假一罚十	询价
上海专毅电子科技有限公司	IS45S32400E-6TLA1	ISSI	17+	TSSOP86	9988	只做原装进口,自己库存	询价
深圳市卓越微芯电子有限公司	IS45S32400E-7BA1	ISSI	25+	BGA90	3850	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市纳立科技有限公司	IS45S32400E-7TLA1	ISSI	三年内		1983	只做原装正品	询价
深圳市昊创电子有限公司	IS45S32400E-7TLA1	ISSI/矽成	0953	SDRAM-AUTO/4MX32SD/TSOP2	94	原装香港现货真实库存。低价	询价
深圳市英卓尔科技有限公司	IS45S32400E-7TLA1	ISSI	20+	TSOP	2960	诚信交易大量库存现货	询价
深圳市斌腾达科技有限公司	IS45S32400E-7BLA2-TR	ISSI, Integrated Silicon Solut	21+	96-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市拓亿芯电子有限公司	IS45S32400E-7TL	ISSI	25+	TSOP56	30000	代理全新原装现货,价格优势	询价

更多IS45S32400E供应商更新时间2026-1-27 20:38:00

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