Auto refresh and self refresh

文件：881.59 Kbytes 页数：33 Pages

ISSI

矽成半导体

All pins are compatible with LVCMOS interface

文件：545.49 Kbytes 页数：33 Pages

ISSI

矽成半导体

1M x 32Bits x 4Banks Mobile Synchronous DRAM

文件：893.11 Kbytes 页数：33 Pages

ISSI

矽成半导体

2M x 32Bits x 4Banks Mobile Synchronous DRAM

文件：877.33 Kbytes 页数：33 Pages

ISSI

矽成半导体

2M x 32Bits x 4Banks Mobile Synchronous DRAM

文件：919.37 Kbytes 页数：35 Pages

ISSI

矽成半导体

SDR SDRAM

·Synchronous, with 3.3V power supply\n·LVTTL interface\n·Programmable burst length (1, 2, 4, 8, full page)\n·Programmable burst sequence: Sequential/Interleave\n·Self refresh and Auto Refresh modes\n·Random column address every clock cycle\n·Programmable CAS latency (2, 3 clocks)\n·Burst read/write

ISSI

矽成半导体

SDR SDRAM

·Synchronous, with 3.3V power supply\n·LVTTL interface\n·Programmable burst length (1, 2, 4, 8, full page)\n·Programmable burst sequence: Sequential/Interleave\n·Self refresh and Auto Refresh modes\n·Random column address every clock cycle\n·Programmable CAS latency (2, 3 clocks)\n·Burst read/write

ISSI

矽成半导体

SDR SDRAM

·Synchronous, with 3.3V power supply\n·LVTTL interface\n·Programmable burst length (1, 2, 4, 8, full page)\n·Programmable burst sequence: Sequential/Interleave\n·Self refresh and Auto Refresh modes\n·Random column address every clock cycle\n·Programmable CAS latency (2, 3 clocks)\n·Burst read/write

ISSI

矽成半导体

Package：60-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 16MBIT PAR 60MINIBGA

ISSI, Integrated Silicon Solution Inc

Package：50-TSOP（0.400"，10.16mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 16MBIT PAR 50TSOP II

ISSI, Integrated Silicon Solution Inc