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IS43R83200F

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R83200F

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文件:1.11874 Mbytes 页数:32 Pages

ISSI

矽成半导体

IS43R83200F_V01

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R83200F-5TL

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R83200F-5TLI

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R83200F-6TL

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R83200F-6TLI

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R83200F-5TL-TR

Package:66-TSSOP(szerokość 0,400",10,16mm);包装:管件 类别:集成电路(IC) 存储器 描述:IC DRAM 256MBIT PAR 66TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS43R83200F-6TL

Package:66-TSSOP(szerokość 0,400",10,16mm);包装:管件 类别:集成电路(IC) 存储器 描述:IC DRAM 256MBIT PAR 66TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS43R83200F-6TLI

Package:66-TSSOP(szerokość 0,400",10,16mm);包装:托盘 类别:集成电路(IC) 存储器 描述:IC DRAM 256MBIT PAR 66TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

供应商型号品牌批号封装库存备注价格
ISSI, Integrated Silicon Solut
24+
66-TSOP II
56200
一级代理/放心采购
询价
ISSI
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
ISSI(美国芯成)
2447
TSOPII-66
315000
108个/管一级代理专营品牌!原装正品,优势现货,长期
询价
ISSI
25+
SOP-66
2854
就找我吧!--邀您体验愉快问购元件!
询价
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
ISSI(美国芯成)
2021+
TSOPII-66
499
询价
ISSI Integrated Silicon Soluti
22+
66TSOP II
9000
原厂渠道,现货配单
询价
ISSI
23+
TSOP
4775
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ISSI
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ISSI(美国芯成)
24+
TSOP6610.2mm
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
更多IS43R83200F供应商 更新时间2025-12-14 10:02:00