IS43R83200F-6TLI集成电路（IC）的存储器规格书PDF中文资料

FEATURES

• VDD and VDDQ: 2.5V ± 0.2V

• SSTL_2 compatible I/O

• Double-data rate architecture; two data transfers

per clock cycle

• Bidirectional, data strobe (DQS) is transmitted/

received with data, to be used in capturing data

at the receiver

• DQS is edge-aligned with data for READs and

centre-aligned with data for WRITEs

• Differential clock inputs (CK and CK)

• DLL aligns DQ and DQS transitions with CK

transitions

• Commands entered on each positive CK edge; data

and data mask referenced to both edges of DQS

• Four internal banks for concurrent operation

• Data Mask for write data. DM masks write data

at both rising and falling edges of data strobe

• Burst Length: 2, 4 and 8

• Burst Type: Sequential and Interleave mode

• Programmable CAS latency: 2, 2.5 and 3

• Auto Refresh and Self Refresh Modes

• Concurrent Auto Precharge supported

• TRAS Lockout supported (tRAP = tRCD)