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IS43R32800

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文件:546.68 Kbytes 页数:39 Pages

ISSI

矽成半导体

IS43R32800

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ISSI

矽成半导体

IS43R32800F

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R32800F-5BI

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R32800F-5BL

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R32800F-5BLI

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R32800F-6BL

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R32800F-6BLI

8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM

FEATURES • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and

文件:763.31 Kbytes 页数:32 Pages

ISSI

矽成半导体

IS43R32800-5BL

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文件:546.68 Kbytes 页数:39 Pages

ISSI

矽成半导体

IS43R32800-75BL

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文件:546.68 Kbytes 页数:39 Pages

ISSI

矽成半导体

供应商型号品牌批号封装库存备注价格
ISSI
23+
144-FBGA(12x12)
71890
专业分销产品!原装正品!价格优势!
询价
ISSI
三年内
1983
只做原装正品
询价
ISSI/矽成
1304
DDR1SDRAM/8MX32DDR1/FBGA
118
原装香港现货真实库存。低价
询价
ISSI, Integrated Silicon Solut
21+
BGA
1000
进口原装!长期供应!绝对优势价格(诚信经营
询价
ISSI
25+
BGA
30000
原装现货,假一赔十.
询价
ISSI, Integrated Silicon Solut
24+
144-LFBGA(12x12)
56200
一级代理/放心采购
询价
ISSI
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
ISSI(美国芯成)
2447
LFBGA-144(12x12)
315000
189个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
ISSI
25+
BGA-144
1001
就找我吧!--邀您体验愉快问购元件!
询价
ISSI(美国芯成)
2021+
LFBGA-144(12x12)
499
询价
更多IS43R32800供应商 更新时间2026-2-3 16:30:00