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IS42S32200B-7T中文资料PDF规格书
IS42S32200B-7T规格书详情
GENERAL DESCRIPTION
The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.
The 64Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible.
FEATURES
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length: (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Industrial temperature availability
• Package 400-mil 86-pin TSOP II
• Lead free package is available
产品属性
- 型号:
IS42S32200B-7T
- 制造商:
Integrated Silicon Solution Inc
- 功能描述:
DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II
- 功能描述:
2M X 32 SYNCHRONOUS DRAM, 6.5 ns, PDSO86
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ISSI |
2016+ |
TSOP86 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ISSI |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ISSI |
20+ |
N/A |
8800 |
只做原装正品 |
询价 | ||
ISSI |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
ISSI |
22+ |
TSOP |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ISSI |
21+ |
TSOP |
13880 |
公司只售原装,支持实单 |
询价 | ||
ISSI |
04+ |
TSOP |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ISSI |
2023+ |
TSOP |
6893 |
专注全新正品,优势现货供应 |
询价 | ||
ISSI |
0350+ |
TSOP |
10 |
原装现货支持BOM配单服务 |
询价 | ||
ISSI |
ROHS |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |