IS42S32200-6T中文资料北京矽成数据手册PDF规格书

OVERVIEW

ISSIs 64Mb Synchronous DRAM IS42S32200 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

GENERAL DESCRIPTION

The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.

FEATURES

• Clock frequency: 166, 143 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length – (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Self refresh modes

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Industrial temperature availability

• Package 400-mil 86-pin TSOP II