EDO & Fast Page Mode DRAM

·Extended Data-Out (EDO) or Fast Page Mode (FPM) option\n·TTL compatible inputs and outputs:5V ± 10% and 3.3V ± 10%\n·Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden\n·Byte Write and Byte Read operation via two CAS\n·Industrial temperature range: -40°C to +85°C\n·Long-Term Support

ISSI

矽成半导体

Fast Page Mode Access Cycle

文件：314.66 Kbytes 页数：17 Pages

ISSI

矽成半导体

4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION The ISSI 4405x Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. FEATURES • Fast Page Mode Access Cycle • TTL compati

文件：138.24 Kbytes 页数：17 Pages

ISSI

矽成半导体

TSOP

ISSI

矽成半导体

上传：深圳市勤思达科技有限公司

TSOP54

ISSI

矽成半导体

上传：深圳市凌旭科技有限公司