IS41LV44002B-50JL中文资料矽成半导体数据手册PDF规格书

DESCRIPTION

The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

These features make the IS41LV44002B ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.

FEATURES

• Extended Data-Out (EDO) Page Mode access cycle

• TTL compatible inputs and outputs

• Refresh Interval:

– 2,048 cycles/32 ms

• Refresh Mode: RAS-Only,

CAS-before-RAS (CBR), and Hidden

• Single power supply: 3.3V ± 10

• Byte Write and Byte Read operation via two CAS

• Industrial Temperature Range: -40°C to +85°C

• Lead-free available