IS41LV16256-35K中文资料北京矽成数据手册PDF规格书

DESCRIPTION

TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16256 and IS41LV16256 ideal for use in 16 and 32-bit wide data bus systems.

FEATURES

• TTL compatible inputs and outputs

• Refresh Interval: 512 cycles/8 ms

• Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden

• JEDEC standard pinout

• Single power supply

5V ± 10 (IS41C16256)

3.3V ± 10 (IS41LV16256)

• Byte Write and Byte Read operation via two CAS

• Extended Temperature Range -30oC to 85oC

• Industrail Temperature Range -40oC to 85oC