256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16256 and IS41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. The IS41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10 n

文件：215.66 Kbytes 页数：20 Pages

ICSI

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word.

文件：153.38 Kbytes 页数：19 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16256 and IS41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. The IS41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10 n

文件：215.66 Kbytes 页数：20 Pages

ICSI

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word.

文件：153.38 Kbytes 页数：19 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word.

文件：153.38 Kbytes 页数：19 Pages

ISSI

矽成半导体

4Mb DRAM WITH EDO PAGE MODE

DESCRIPTION The ISSIs IS41C/LV16256C is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte W

文件：475.46 Kbytes 页数：22 Pages

ISSI

矽成半导体

EDO & Fast Page Mode DRAM

·Extended Data-Out (EDO) or Fast Page Mode (FPM) option\n·TTL compatible inputs and outputs:5V ± 10% and 3.3V ± 10%\n·Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden\n·Byte Write and Byte Read operation via two CAS\n·Industrial temperature range: -40°C to +85°C\n·Long-Term Support\n

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSI

矽成半导体

Package：44-TSOP（0.400"，10.16mm 宽），40 引线；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 4MBIT PARALLEL 40TSOP

ISSI, Integrated Silicon Solution Inc

Package：44-TSOP（0.400"，10.16mm 宽），40 引线；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 4MBIT PARALLEL 40TSOP

ISSI, Integrated Silicon Solution Inc