IS41C16256-60K数据手册供应商报价ISSI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS41C16256-60K	文件：215.66 Kbytes Page：20 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16256 and IS41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. The IS41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10 n 文件：215.66 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16256-60K	文件：153.38 Kbytes Page：19 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. 文件：153.38 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS41C16256-60KI	文件：153.38 Kbytes Page：19 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. 文件：153.38 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS41C16256-60T	文件：153.38 Kbytes Page：19 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. 文件：153.38 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS41C16256-60T	文件：215.66 Kbytes Page：20 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16256 and IS41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. The IS41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10 n 文件：215.66 Kbytes 页数：20 Pages	ICSI	ICSI
IS41C16256-60TI	文件：153.38 Kbytes Page：19 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. 文件：153.38 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS41C16256-60K
制造商：
ICSI
制造商全称：
Integrated Circuit Solution Inc
功能描述：
256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	IS41C16256-60K	ISSI	2025+	SOJ-40	5000	原装进口价格优请找坤融电子!	询价
深圳市福田区绿盛电子商行	IS41C16256-60K	ISSI	2015+	SOJ	19889	一级代理原装现货,特价热卖!	询价
深圳市一线半导体有限公司	IS41C16256-60K	ISSI	24+	SOJ40	17		询价
谛辉(北京/上海/青岛 )电子科技有限公司	IS41C16256-60K	ISSI	25+	SOJ-40	18000	原厂直接发货进口原装	询价
齐创科技(上海,北京,青岛)有限公司	IS41C16256-60K	ISSI	23+	SOJ-40	5000	原装正品,假一罚十	询价
深圳市佳鑫美电子科技有限公司	IS41C16256-60K	ISSI	25+	SOJ	2987	绝对全新原装现货供应!	询价
深圳市昊创电子有限公司	IS41C16256-60K	ISSI	1824+	SOJ-40	3000	原装现货专业代理,可以代拷程序	询价
深圳市拓亿芯电子有限公司	IS41C16256-60K	ISSI	25+	SOJ	30000	代理全新原装现货,价格优势	询价
京海半导体(深圳)有限公司	IS41C16256-60K	ISSI	21+	SOJ40	10000	原装现货假一罚十	询价
标准国际(香港)有限公司	IS41C16256-60K	ISSI	25+		53	公司优势库存热卖中!!	询价

更多IS41C16256-60K供应商更新时间2025-12-12 15:08:00

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