IS41C16256-60T中文资料下载批发采购第26页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS41LV16257B-35T	文件：129.47 Kbytes Page：20 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices 文件：129.47 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16257B-35TL	文件：129.47 Kbytes Page：20 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices 文件：129.47 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16257B-60K	文件：129.47 Kbytes Page：20 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices 文件：129.47 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16257B-60KL	文件：129.47 Kbytes Page：20 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices 文件：129.47 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16257B-60T	文件：129.47 Kbytes Page：20 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices 文件：129.47 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16257B-60TL	文件：129.47 Kbytes Page：20 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices 文件：129.47 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16257S-60K	文件：760.51 Kbytes Page：20 Pages	256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ICSI IC41C16257 and the IC41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, mak 文件：760.51 Kbytes 页数：20 Pages	ICSI	ICSI
IS41LV16400	文件：143.62 Kbytes Page：19 Pages	4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor 文件：143.62 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS41LV16400-50T	文件：143.62 Kbytes Page：19 Pages	4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor 文件：143.62 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI
IS41LV16400-50TE	文件：143.62 Kbytes Page：19 Pages	4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor 文件：143.62 Kbytes 页数：19 Pages	ISSI 矽成半导体	ISSI

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详细参数

型号：
IS41
制造商：
ICSI
制造商全称：
Integrated Circuit Solution Inc
功能描述：
256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福田区绿盛电子商行	IS41C16256-60T	ISSI	2015+	DIP/SMD	19889	一级代理原装现货,特价热卖!	询价
深圳市宏捷佳电子科技有限公司	IS41C16256-60T	ISSI	2023+	TSOP	50000	原装现货	询价
贸泽芯城（深圳）电子科技有限公司	IS41C16256-60TI	ISSI	23+	TSOP	4710	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市卓越微芯电子有限公司	IS41C16256C-35KLI	ISSI	25+	SOJ40	3850	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市河锋鑫科技有限公司	IS41C16256C35TLI	ISSI Integrated Silicon Soluti	22+	40TSOP	9000	原厂渠道,现货配单	询价
深圳市纳立科技有限公司	IS41C16256C-35TLI	ISSI	三年内		1983	只做原装正品	询价
深圳市昊创电子有限公司	IS41C16256C-35TLI	ISSI/矽成	1240	DRAM/256KX16EDO/TSOP2(40	1692	原装香港现货真实库存。低价	询价
瀚佳科技(深圳)有限公司	IS41C16256C-35TLI	ISSI, Integrated Silicon Solut	24+	40-TSOP	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS41C16256C-35TLI	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IS41C16256C-35TLI	ISSI	25+	40-TSOP	1001	就找我吧!--邀您体验愉快问购元件!	询价

更多IS41供应商更新时间2026-1-18 9:01:00

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