Gate drive supply range from 10 V to 20 V

Description The IRS21850 is a high voltage, high speed power MOSFET and IGBT single high-side driver with propagation delay matched output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The floating logic input is compatible with standard

文件：344.86 Kbytes 页数：20 Pages

IRF

Gate drive supply range from 10 V to 20 V

Description The IRS21850 is a high voltage, high speed power MOSFET and IGBT single high-side driver with propagation delay matched output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The floating logic input is compatible with standard

文件：344.86 Kbytes 页数：20 Pages

IRF

Gate drive supply range from 10 V to 20 V

Description The IRS21850 is a high voltage, high speed power MOSFET and IGBT single high-side driver with propagation delay matched output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The floating logic input is compatible with standard

文件：344.86 Kbytes 页数：20 Pages

IRF

SINGLE HIGH SIDE DRIVER IC

文件：344.86 Kbytes 页数：20 Pages

IRF

SINGLE HIGH SIDE DRIVER IC

文件：344.86 Kbytes 页数：20 Pages

IRF

电平移位门极驱动

600 V High Side Driver IC with typical 4 A source and 4 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. ·Gate drive supply range from 10 V to 20 V\n ·Undervoltage lockout for for VBS and VCC\n ·3.3 V and 5 V input logic compatible\n ·Matched propagation delay for all channels\n ·Tolerant to negative transient voltage;

Infineon

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HIGH-SIDE 8SOIC

INFINEON

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HIGH-SIDE 8SOIC

INFINEON

英飞凌