IRLR/U3303数据表ic资料供应代理无锡固电-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRLR/U3303	文件：139.15 Kbytes Page：10 Pages	Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：139.15 Kbytes 页数：10 Pages	IRF	IRF
IRLR3303	文件：139.15 Kbytes Page：10 Pages	Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：139.15 Kbytes 页数：10 Pages	IRF	IRF
IRLR3303	文件：335.28 Kbytes Page：2 Pages	N-Channel MOSFET Transistor 文件：335.28 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRLR3303PBF	文件：307.21 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well 文件：307.21 Kbytes 页数：10 Pages	IRF	IRF

更多IRLR/U3303供应商更新时间2025-12-1 14:01:00