THYRISTOR/DIODE and THYRISTOR/THYRISTOR

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power thyristor/diodes in three Basic Configurations ■ Simple Mounting ■ UL E789

文件：381.02 Kbytes 页数：12 Pages

IRF

THYRISTOR/DIODE and THYRISTOR/THYRISTOR

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power thyristor/diodes in three Basic Configurations ■ Simple Mounting ■ UL E789

文件：391.54 Kbytes 页数：12 Pages

IRF

THYRISTOR/DIODE and THYRISTOR/THYRISTOR

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power thyristor/diodes in three Basic Configurations ■ Simple Mounting ■ UL E789

文件：381.02 Kbytes 页数：12 Pages

IRF

isc N-Channel MOSFET Transistor

文件：342.09 Kbytes 页数：2 Pages

ISC

无锡固电

Monolithic Dual PNP General Purpose Amplifier

FEATURES ● High Gain at Low Current ● Low Output Capacitance ● Tight IB Match ● Tight VBE Tracking ● Dielectrically Isolated Matched Pairs for Differential Amplifiers

文件：70.86 Kbytes 页数：2 Pages

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