STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

文件：325.08 Kbytes 页数：12 Pages

IRF

STANDARD RECOVERY DIODES

文件：328.08 Kbytes 页数：12 Pages

IRF

STANDARD RECOVERY DIODES

Infineon

英飞凌

LM196/LM396 10 Amp Adjustable Voltage Regulator

文件：295.32 Kbytes 页数：14 Pages

NSC

国半

Silicon Complementary Transistors Audio Power Output and Medium Power Switching

Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: hFE= 2.3 Min @ IC= 7A Collector–Emitter Sustaining Voltage: VCE

文件：24.27 Kbytes 页数：2 Pages

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体