RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effe

文件：125.52 Kbytes 页数：8 Pages

IRF

SiC N-Channel MOSFET

FEATURES · Very fast and robust intrinsic body diode · Positive temperature characteristics, easy to parallel · Process of non-bright Tin electroplatin · Fast switching speed and low switching losses APPLICATIONS · EV Fast Charging Modules · Solar Inverters · DC-DC Converters · SMPS (Swit

文件：393.84 Kbytes 页数：3 Pages

ISC

无锡固电

SiC N-Channel MOSFET

FEATURES · Very fast and robust intrinsic body diode · Positive temperature characteristics, easy to parallel · Process of non-bright Tin electroplatin · Fast switching speed and low switching losses APPLICATIONS · EV Fast Charging Modules · Solar Inverters · DC-DC Converters · SMPS (Swit

文件：393.84 Kbytes 页数：3 Pages

ISC

无锡固电

SiC N-Channel MOSFET

FEATURES · Very fast and robust intrinsic body diode · Positive temperature characteristics, easy to parallel · Process of non-bright Tin electroplatin · Fast switching speed and low switching losses APPLICATIONS · EV Fast Charging Modules · Solar Inverters · DC-DC Converters · SMPS (Swit

文件：393.84 Kbytes 页数：3 Pages

ISC

无锡固电