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IRGP30B120KD-E

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

VCES=1200V VCE(on)typ.=2.28V VGE=15V,IC=25A,25°C INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThrough(NPT)Technology •LowDiodeVF(1.76VTypical@25A&25°C) •10µsShortCircuitCapability

IRF

International Rectifier

IRGP30B120KD-EP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThrough(NPT)Technology •LowDiodeVF(1.76VTypical@25A&25°C) •10μsShortCircuitCapability •SquareRBSOA •UltrasoftDiodeRecoveryCharacteristics •PositiveVCE(on)TemperatureCoefficient •ExtendedLeadTO-247ADPackage •Lead-Free Bene

IRF

International Rectifier

IRGP30B120KD-EPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

MBR30B120CTH

PowerSchottkyRectifier-30Amp120Volt

SIRECTSirectifier Global Corp.

矽莱克半导体深圳市矽莱克半导体有限公司

MBR30B120FCTH

PowerSchottkyRectifier-30Amp120Volt

SIRECTSirectifier Global Corp.

矽莱克半导体深圳市矽莱克半导体有限公司

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