首页 >IRG4PH50S功率三极管>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
UltraFastSpeedIGBT FEATURES ·UltrafastOptimizesforhighoperatingfrequencies ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·Highestefficiencyavailable ·Optimaizedforpowerconversion;UPS,SMPSandwelding | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=1200V,Vce(on)typ.=2.78V,@Vge=15V,Ic=24A) Features •UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode •NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations •Optimizedforpowerconversion;SMPS,UPS and | IRF International Rectifier | IRF | ||
IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.56V@IC=20A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=2.78V,@Vge=15V,Ic=24A) Features •UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode •NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations •IGBTco-packagedwithHEXFREDTMultrafast, ult | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •UltraFast:Optimizedforhighoperatingfrequenciesupto40kHzinhardswitching,>200kHzinresonantmode •NewIGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
UltraFastSpeedIGBT Features •UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode •NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations •Optimizedforpowerconversion;SMPS,UPS and | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF |
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