INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard D2Pak package Benefits • Generati

文件：308.22 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

Features •Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications •Industry-benchmark switching losses improve efficiency of all power supply topologies •50 reduction of Eoff parameter •Low IGBT conduction losses •Latest-generation IGBT design

文件：139.38 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design

文件：180.68 Kbytes 页数：8 Pages

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

文件：582.54 Kbytes 页数：8 Pages

IRF