HiRel MOSFETs

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Infineon

英飞凌

POWER MOSFET THRU-HOLE (TO-257AA)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

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IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

文件：252.36 Kbytes 页数：6 Pages

IRF

Fit Rate / Equivalent Device Hours

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