HEXFET® Power MOSFET

Benefits\n● Low Gate-to-Drain Charge to Reduce\n   Switching Losses\n● Fully Characterized Capacitance Including\n   Effective COSS to Simplify Design, (See App.\n   Note AN1001)\n● Fully Characterized Avalanche Voltage\n   and Current\n● Lead-Free

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MOSFET MOSFT 150V 41A 45mOhm 72nC

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英飞凌

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：268.02 Kbytes 页数：12 Pages

IRF

Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：193 Kbytes 页数：11 Pages

IRF

High frequency DC-DC converters

Benefits ● Low Gate-to-Drain Charge to Reduce    Switching Losses ● Fully Characterized Capacitance Including    Effective COSS to Simplify Design, (See App.    Note AN1001) ● Fully Characterized Avalanche Voltage    and Current ● Lead-Free Applications ● High frequency DC-DC converters

文件：714.57 Kbytes 页数：13 Pages

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