Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)

SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：126.79 Kbytes 页数：10 Pages

IRF

SMPS MOSFET

SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：3.7302 Mbytes 页数：10 Pages

KERSEMI

SMPS MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：3.8431 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：222.52 Kbytes 页数：10 Pages

IRF

丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features | + Vos=200v © os 60A © Rosow 50650 @Vos=10V

文件：998.31 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

N-Channel MOSFET Transistor

文件：336.4 Kbytes 页数：2 Pages

ISC

无锡固电

High frequency DC-DC converters

文件：231.67 Kbytes 页数：11 Pages

IRF

High frequency DC-DC converters

文件：231.67 Kbytes 页数：11 Pages

IRF

采用 D-Pak 封装的 200V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 具备完全特性化的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 具备完全特性化的的电容，包括有效的Coss以简化设计;

Infineon

英飞凌