| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：IRFR5305；Package：TO-252；-60 V P - Channel Enhancement Mode MOSFET GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON) 文件：1.42062 Mbytes 页数：7 Pages | UMW 友台半导体 | UMW | ||
丝印：IRFR5305；Package：TO-252；-60 V P-Channel Enhancement Mode MOSFET DESCRIPTION The uses advancedtrench technology to provide excellentRDS(ON) and low gate charge .Thisdevice issuitable for use as a loadswitch or inPWM applications. GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON) 文件：655.13 Kbytes 页数：6 Pages | EVVOSEMI 翊欧 | EVVOSEMI | ||
丝印：IRFR5305；Package：TO-252；-60 V P - Channel Enhancement Mode MOSFET GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON) 文件：1.42062 Mbytes 页数：7 Pages | UMW 友台半导体 | UMW | ||
丝印：IRFR5305；Package：TO-252；-60 V P-Channel Enhancement Mode MOSFET DESCRIPTION The uses advancedtrench technology to provide excellentRDS(ON) and low gate charge .Thisdevice issuitable for use as a loadswitch or inPWM applications. GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON) 文件：655.13 Kbytes 页数：6 Pages | EVVOSEMI 翊欧 | EVVOSEMI | ||
丝印：FR5305；Package：TO-252；P-Channel Enhancement Mode MOSFET Features * Vos =-60V,lo =-16A Ros 52mQ @ Vos=-10V (Typ) 文件：1.84221 Mbytes 页数：5 Pages | TECHPUBLIC 台舟电子 | TECHPUBLIC | ||
IRFR5305 | Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provid 文件：3.75106 Mbytes 页数：10 Pages | KERSEMI | KERSEMI | |
IRFR5305 | -60 V P - Channel Enhancement Mode MOSFET GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON) 文件：1.42062 Mbytes 页数：7 Pages | UMW 友台半导体 | UMW | |
IRFR5305 | -60 V P-Channel Enhancement Mode MOSFET DESCRIPTION The uses advancedtrench technology to provide excellentRDS(ON) and low gate charge .Thisdevice issuitable for use as a loadswitch or inPWM applications. GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON) 文件：655.13 Kbytes 页数：6 Pages | EVVOSEMI 翊欧 | EVVOSEMI | |
HEXFET짰 Power MOSFET ( VDSS = -55V , RDS(on) = 0.065廓 , ID = -31A ) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provid 文件：248.75 Kbytes 页数：11 Pages | IRF | IRF | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provid 文件：3.86744 Mbytes 页数：10 Pages | KERSEMI | KERSEMI |
详细参数
- 型号：
IRFR5305
- 功能描述：
MOSFET P-CH 55V 31A DPAK
- RoHS：
否
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
HEXFET®
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
2009+ |
TO-252 |
6000 |
公司原装现货,常备物料！
|
询价 | ||
IR |
2009 |
TO-252 |
6000 |
公司原装现货,常备物料！ |
询价 | ||
IR |
23+ |
TO-252 |
18689 |
询价 | |||
IR |
24+ |
SOT-252 |
755 |
询价 | |||
IR |
24+ |
原厂封装 |
5000 |
原装现货假一罚十 |
询价 | ||
IOR |
03+ |
TO252 |
6 |
原装现货海量库存欢迎咨询 |
询价 | ||
IOR |
22+ |
TO252 |
1000 |
全新原装现货!自家库存! |
询价 | ||
IOR |
25+ |
RTO220REEL |
2987 |
绝对全新原装现货供应! |
询价 | ||
INTERNATI |
23+ |
NA |
841 |
专做原装正品,假一罚百! |
询价 |
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