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IRFR/U1010Z

Advanced Process Technology

Description Specifically designed for Automotive applications, this MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetiti

文件:4.28522 Mbytes 页数:11 Pages

KERSEMI

IRFR1010Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

文件:292.8 Kbytes 页数:11 Pages

IRF

IRFR1010Z

Advanced Process Technology

Description Specifically designed for Automotive applications, this MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetiti

文件:4.28522 Mbytes 页数:11 Pages

KERSEMI

IRFR1010Z

N-Channel MOSFET Transistor

文件:335.26 Kbytes 页数:2 Pages

ISC

无锡固电

供应商型号品牌批号封装库存备注价格
IR
NEW
TO-251/TO-25
9896
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
IR
22+
6000
终端可免费供样,支持BOM配单
询价
IR
23+
8000
只做原装现货
询价
IR
23+
7000
询价
IR
24+
TO-252
30000
只做正品原装现货
询价
更多IRFR/U1010Z供应商 更新时间2025-10-7 16:15:00