IRFS240

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRFS240A

AdvancedPowerMOSFET(200V,0.18ohm,12.8A)

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowerRDS(ON):0.144Ω(Typ.)

IRFS240A

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea

IRFS240B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

IRFY240

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

IRFY240

N-CHANNELPOWERMOSFET

IRFY240

SimpleDriveRequirements

IRFY240C

N-ChannelMOSFETinaHermeticallysealedTO257ABMetalPackage.

IRFY240C

POWERMOSFETTHRU-HOLE(TO-257AA

PartNumberRDS(on)IDEyelets IRFY240C0.18Ω16ACeramic IRFY240CM0.18Ω16ACeramic HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesver

IRFY240C

SimpleDriveRequirements