IRFF430中文资料INTERSIL数据手册PDF规格书
IRFF430规格书详情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
• 2.75A, 500V
• rDS(ON) = 1.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
产品属性
- 型号：
IRFF430
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39
- 功能描述：
TRANS MOSFET N-CH 500V 2.5A 3PIN TO-39 - Bulk
- 功能描述：
Single N-Channel 500 V 25 W 29.5 nC Hexfet Transistor Through Hole - TO-39
- 功能描述：
N CH MOSFET, 500V, 2.5A, TO-205AF; Transistor
- Polarity：
N Channel; Continuous Drain Current
- Id：
2.5A; Drain Source Voltage
- Vds：
500V; On Resistance
- Rds(on)：
1.5ohm; Rds(on) Test Voltage
- Vgs：
10V; Threshold Voltage Vgs
- Typ：
4V ;RoHS
- Compliant：
No
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
询价 | |||
HAR |
9721 |
CAN-3 |
1145 |
全新原装现货100真实自己公司 |
询价 | ||
HAR |
25+ |
CAN-3 |
18000 |
原厂直接发货进口原装 |
询价 | ||
原厂 |
2540+ |
CAN3 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
HARRIS |
2025+ |
TO-39 |
4035 |
全新原厂原装产品、公司现货销售 |
询价 | ||
IR |
2223+ |
TO-3 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
INTERSIL |
24+ |
CAN |
1000 |
询价 | |||
IR |
22+ |
CAN |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
TI |
23+ |
VQFN18 |
5000 |
全新原装,支持实单,非诚勿扰 |
询价 | ||
IR |
02+ |
CAN |
49 |
询价 |
