IRFF220中文资料INTERSIL数据手册PDF规格书
IRFF220规格书详情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
• 3.5A, 200V
• rDS(ON) = 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
产品属性
- 型号：
IRFF220
- 制造商：
International Rectifier
- 功能描述：
TRANS MOSFET N-CH 200V 3.5A 3PIN TO-39 - Bulk
- 功能描述：
N CH MOSFET, 200V, 3.5A, TO-205AF, Transistor
- Polarity：
N Channel, Continuous Drain Current
- Id：
3.5A, Drain Source Voltage
- Vds：
200V, On Resistance
- Rds(on)：
800mohm, Rds(on) Test Voltage
- Vgs：
10V, Threshold Voltage
- Vgs：
4V, No. of
- Pins：
3 , RoHS
- Compliant：
No
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2450+ |
CN3 |
6540 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
HAR |
24+ |
CAN3 |
181 |
询价 | |||
IR |
24+ |
TO257 |
6620 |
郑重承诺只做原装进口现货 |
询价 | ||
HARRIS |
23+ |
CAN3 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
24+ |
CAN3 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
HAR |
22+ |
CAN3 |
14008 |
原装正品 |
询价 | ||
IR |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
IR |
23+ |
CN3 |
8000 |
只做原装现货 |
询价 | ||
INTERSIL |
22+ |
CAN3 |
20000 |
公司只做原装 品质保障 |
询价 | ||
IR |
23+ |
CN3 |
7000 |
询价 |
