IRFBC30L中文资料IRF数据手册PDF规格书
IRFBC30L规格书详情
描述 Description
Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFBC30L) is available for low-profile applications.
● Surface Mount (IRFBC30S)
● Low-profile through-hole (IRFBC30L)
● Available in Tape & Reel (IRFBC30S)
● Dynamic dv/dt Rating
● 150°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
产品属性
- 型号:
IRFBC30L
- 功能描述:
MOSFET N-CH 600V 3.6A TO-262
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
-
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-262 |
8866 |
询价 | |||
IR |
1923+ |
TO-263 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
Vishay Siliconix |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VISHAY/威世通 |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
01+02+ |
TO-262 |
233 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
23+ |
TO-262 |
35890 |
询价 | |||
IR |
2016+ |
TO262 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
24+ |
TO-262 |
501153 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
IR |
23+ |
TO262 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |