Power MOSFET

FEATURES • Surface-mount (IRFBC30S, SiHFBC30S) • Low-profile through-hole (IRFBC30L, SiHFBC30L) • Available in tape and reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt rating • 150 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of c

文件：310.37 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)

Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It

文件：362.05 Kbytes 页数：10 Pages

IRF

Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt

文件：147.97 Kbytes 页数：10 Pages

IRF

Power MOSFET

文件：961.84 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：961.84 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

Surface-mount (IRFBC30S, SiHFBC30S)\nLow-profile through-hole (IRFBC30L, SiHFBC30L)\nAvailable in tape and reel (IRFBC30S, SiHFBC30S);

Vishay

威世科技

Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)

Infineon

英飞凌