IRF9Z30_V01中文资料威世数据手册PDF规格书

FEATURES

• P-channel versatility

• Compact plastic package

• Fast switching

• Low drive current

• Ease of paralleling

• Excellent temperature stability

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of the power MOSFET

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The p-channel power MOSFET’s are designed for

application which require the convenience of reverse

polarity operation. They retain all of the features of the more

common n-channel Power MOSFET’s such as voltage

control, very fast switching, ease of paralleling, and

excellent temperature stability.

P-channel power MOSFETs are intended for use in power

stages where complementary symmetry with n-channel

devices offers circuit simplification. They are also very useful

in drive stages because of the circuit versatility offered by

the reverse polarity connection. Applications include motor

control, audio amplifiers, switched mode converters, control

circuits and pulse amplifiers.