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SIHF9Z24

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半导体

SiHF9Z24

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z24L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z24S

PowerMOSFET

FEATURES •Advancedprocesstechnology •Surfacemount(IRF9Z24S,SiHF9Z24S) •175°Coperatingtemperature •Fastswitching •P-channel •Fullyavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesin

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z24S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z24STL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z24STR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半导体

SIHFI9Z24G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SVD9Z24NT

-12A,-55VP-CHANNELMOSFET

GENERALDESCRIPTION SVD9Z24NTisaP-channelenhancementmodepowerMOSfieldeffect transistorwhichisproducedusingSilanplanarVDMOSprocess.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance, an

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

UF9Z24

12A,55VP-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友顺友顺科技股份有限公司

详细参数

  • 型号:

    IRF9Z24NSTRL

  • 功能描述:

    MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2020+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
2020+
TO-263
22000
全新原装正品 现货库存 价格优势
询价
INFINEON/IR
1907+
NA
1600
20年老字号,原装优势长期供货
询价
IR
SOT-263
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
IR
16+
TO-263
6306
全新原装/深圳现货库2
询价
IR
21+
TO-263
6850
只做原装正品假一赔十!正规渠道订货!
询价
INFINEON/英飞凌
24+
210494
只做原厂渠道 可追溯货源
询价
INFINEON/IR
14+
1600
TO-263-3 (D2PAK)
询价
INFINEON
21+
TO263
780
只做原装,可开税票
询价
INFINEON
100000
代理渠道/只做原装/可含税
询价
更多IRF9Z24NSTRL供应商 更新时间2025-5-18 14:08:00