IRF9620中文资料Intersil数据手册PDF规格书
IRF9620规格书详情
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
• 3.5A, 200V
• rDS(ON) = 1.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
产品属性
- 型号：
IRF9620
- 功能描述：
MOSFET P-Chan 200V 3.5 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2022+ |
TO-220AB |
6600 |
只做原装,假一罚十,长期供货。 |
询价 | ||
IR |
23+ |
TO-220 |
7000 |
询价 | |||
INTERNATIONAL RECTIFIER |
2023+ |
SMD |
10018 |
安罗世纪电子只做原装正品货 |
询价 | ||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 | ||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
22+ |
TO-220 |
87234 |
询价 | |||
VISHAY/威世 |
24+ |
TO-220- |
3800 |
大批量供应优势库存热卖 |
询价 | ||
IR |
17+ |
TO-220 |
6200 |
询价 | |||
VISHAY |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
IR |
21+ |
TO-263 |
1568 |
10年芯程,只做原装正品现货,欢迎加微信垂询! |
询价 |
