IRF9510中文资料3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET数据手册Renesas规格书
IRF9510规格书详情
描述 Description
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
• 3.0A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
技术参数
- 型号：
IRF9510
- 功能描述：
MOSFET P-Chan 100V 4.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO-220 |
8000 |
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IR |
22+ |
SOP-8 |
8000 |
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询价 | ||
24+ |
N/A |
47000 |
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询价 | |||
Vishay |
24+ |
NA |
3673 |
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询价 | ||
IR/国际整流器 |
24+ |
TO-220 |
30000 |
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询价 | ||
IR/VISH |
24+ |
65230 |
询价 | ||||
IR |
1923+ |
TO-220 |
6896 |
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询价 | ||
IR |
23+ |
TO-220 |
50000 |
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询价 | ||
FAIRCHILD |
24+ |
TO-220 |
5000 |
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询价 | ||
IR |
22+ |
TO-220 |
30000 |
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询价 |
