首页 >IRF9310PBFMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-Channel30V(D-S)MOSFET Features Industry-standardpinoutSOP-8Package CompatiblewithExistingSurfaceMountTechniques RoHSCompliant,Halogen-Free MSL1,Industrialqualification | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
P-Channel30V(D-S)MOSFET Features Industry-standardpinoutSOP-8Package CompatiblewithExistingSurfaceMountTechniques RoHSCompliant,Halogen-Free MSL1,Industrialqualification | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
ChargeandDischargeSwitchforNotebookPCBatteryAppilcation | IRF International Rectifier | IRF | ||
P-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-channelEnhancementModePowerMOSFET Features VDS=-30V,ID=-20A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
P-ChannelEnhancementModeMOSFET Features RDS(ON)=5.2mQ@VGs=-10V RDS(ON)=9.5mQ@VGs=-4V SuperhighdensitycelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrent capability | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
RoHSCompliantContainingnoLead,noBromideandnoHalogen | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
P-ChannelEnhancementModeMOSFET Description TheIRFH9310usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-30VID=-90A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
RoHSCompliantContainingnoLead,noBromideandnoHalogen | IRF International Rectifier | IRF | ||
ChargeandDischargeSwitchforNotebookPCBatteryApplication | IRF International Rectifier | IRF |
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