IRF830中文资料新硅能微电子数据手册PDF规格书

Description

The IRF830 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.

Features

■ Extremely high dv/dt capability

■ Low Gate Charge Qg results in

Simple Drive Requirement

■ 100 avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability

Application

■ High current, high speed switching

■ Lighting

■ Ideal for off-line power supply, adaptor, PFC